收藏本站
NXP Semiconductors
PESD5V0L1UA/UB/UL
Low capacitance unidirectional ESD protection diodes
7. Application information
The PESD5V0L1Ux series is designed for the protection of one unidirectional data or
signal line from the damage caused by ESD and surge pulses. The devices may be used
on lines where the signal polarities are either positive or negative with respect to ground.
The PESD5V0L1Ux series provides a surge capability up to 42 W per line for an 8/20 μ s
waveform.
line to be protected
(positive signal polarity)
PESD5V0L1Ux
GND
line to be protected
(negative signal polarity)
PESD5V0L1Ux
GND
unidirectional protection of one line
006aab613
Fig 6.
Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been quali?ed in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test quali?cation for discrete semiconductors, and is
suitable for use in automotive applications.
PESD5V0L1UA_UB_UL_1
? NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 17 June 2009
7 of 13
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
PESD5V0L1ULD,315 DIODE ESD PROT LOW UNIDIR SOD882
PESD5V0L2UM,315 DIODE ESD PROTECT LOW SOT-883
PESD5V0L5UF,115 DIODE ESD PROTECT 5FOLD 6-XSON
PESD5V0L6UAS,118 DIODE 6FOLD ESD PROTECT 8TSSOP
PESD5V0L7BS,118 DIODE 7FOLD ESD PROTECT 8SOIC
PESD5V0S1BB,335 DIODE ESD BI-DIR 5.0V SOD523
PESD5V0S1BLD,315 DIODE ESD PROTECTION SOD-882
PESD5V0S1BSF,315 DIODE BIDIR ESD PROT SOD962
相关代理商/技术参数
PESD5V0L1UL 制造商:NXP Semiconductors 功能描述:DIODE ESD LOW CAPACITANCE SOD882 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD882 制造商:NXP Semiconductors 功能描述:DIODE, ESD, LOW CAPACITANCE, SOD882, Diode Type:ESD Protection, Clamping Voltage
PESD5V0L1UL,315 功能描述:TVS 二极管 - 瞬态电压抑制器 PESD5V0S1UJ/SOD C31/SOT457/R RoHS:否 制造商:Vishay Semiconductors 极性:Bidirectional 工作电压: 击穿电压:58.9 V 钳位电压:77.4 V 峰值浪涌电流:38.8 A 系列: 封装 / 箱体:DO-214AB 最小工作温度:- 55 C 最大工作温度:+ 150 C
PESD5V0L1UL315 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述:
PESD5V0L1ULD 制造商:NXP Semiconductors 功能描述:DIODE ESD 5V UNIDIR 25PF SOD882 制造商:NXP Semiconductors 功能描述:DIODE, ESD, 5V, UNIDIR, 25PF, SOD882 制造商:NXP Semiconductors 功能描述:DIODE, ESD, 5V, UNIDIR, 25PF, SOD882; TVS Polarity:Unidirectional; Reverse Stand-Off Voltage Vrwm:5V; Breakdown Voltage Min:6.4V; Breakdown Voltage Max:7.2V; Clamping Voltage Vc Max:12V; Peak Pulse Current Ippm:3.5A; No. of Pins:2 ;RoHS Compliant: Yes
PESD5V0L1ULD,315 功能描述:ESD 抑制器 7.2 V 25 pF RoHS:否 制造商:STMicroelectronics 通道:8 Channels 击穿电压:8 V 电容:45 pF 端接类型:SMD/SMT 封装 / 箱体:uQFN-16 功率耗散 Pd: 工作温度范围:- 40 C to + 85 C
PESD5V0L1ULD315 制造商:Rochester Electronics LLC 功能描述: 制造商:NXP Semiconductors 功能描述:
PESD5V0L1USF,315 功能描述:DIODE ESD PROT LOW CAP SOD962 RoHS:是 类别:未定义的类别 >> 其它 系列:* 标准包装:1 系列:* 其它名称:MS305720A
PESD5V0L1USF-H250, 功能描述:DIODE ESD PROT LOW CAP SOD962 RoHS:是 类别:未定义的类别 >> 其它 系列:* 标准包装:1 系列:* 其它名称:MS305720A